tlpge18t,TLFGE18T,tlge18t,tlpye18t 2002-01-17 1 toshiba ingaa ? p led tlpge18t,TLFGE18T,tlge18t,tlpye18t panel circuit indicator 5 mm package ingaa ? p technology all plastic mold type transparent lens line-up: 3 colors (pure green, green, pure yellow) high intensity light emission excellent low current light output straight lead type is also available tlpge 1 8tp, tlfge 1 8tp, tlge 1 8tp, tlpye 1 8tp applications: outdoor message signboards, safety equipment, backlight, etc. line-up product name color material tlpge18t pure green TLFGE18T green tlge18t green tlpye18t pure yellow p ingaa maximum ratings (ta 25c) product name forward current i f (ma) reverse voltage v r (v) power dissipation p d (mw) operating temperature t opr (c) storage temperature t stg (c) tlpge18t 50 4 120 TLFGE18T 50 4 120 tlge18t 50 4 120 tlpye18t 50 4 120 40~100 40~120 unit: mm jedec D jeita D toshiba D weight: 0.31 g
tlpge18t,TLFGE18T,tlge18t,tlpye18t 2002-01-17 2 electrical and optical characteristics (ta 25c) typ. emission wavelength luminous intensity i v forward voltage v f reverse current i r product name d p i f min typ. i f typ. max i f max v r tlpge18t 558 (562) 14 20 85 200 20 2.1 2.4 20 50 4 TLFGE18T 565 (568) 15 20 85 300 20 2.0 2.4 20 50 4 tlge18t 571 (574) 17 20 272 700 20 2.0 2.4 20 50 4 tlpye18t 580 (583) 14 20 272 750 20 2.0 2.4 20 50 4 unit nm ma mcd ma v ma a v precautions please be careful of the following: soldering temperature: 260c max, soldering time: 3 s max (soldering portion of lead: below the lead stopper) if the lead is formed, the lead should be formed up to 5 mm from the body of the device without forming stress to the resin. soldering should be performed after lead forming. this visible led lamp also emits some ir light. if a photodetector is located near the led lamp, please ensure that it will not be affected by this ir light.
tlpge18t,TLFGE18T,tlge18t,tlpye18t 2002-01-17 3 tlpge18t relative luminous intensity forward voltage v f (v) i f ? v f forward current i f (ma) forward current i f (ma) i v ? i f luminous intensity i v (mcd) case temperature tc (c) i v ? tc relative luminous intensity i v wavelength (nm) relative luminous intensity ? wavelength ambient temperature ta (c) i f ? ta allowable forward current i f (ma) radiation pattern 2.0 1.6 2.3 50 30 10 3 1 1.7 2.1 5 100 1.8 1.9 2.2 ta 25c 40 0 120 60 0 40 80 20 20 60 80 100 560 520 640 0.8 0 0.6 1.0 0.2 0.4 540 580 600 620 i f 20 ma ta 25c 30 0 60 90 90 30 60 1.0 0.8 0.6 0.4 0.2 0 80 70 50 40 20 10 70 80 50 40 20 10 20 20 80 5 0.1 3 10 1 0.3 0.5 0 40 60 ta 25c 10 1 100 100 1 10 1000 ta 25c 300 3 30 3 5 30 50
tlpge18t,TLFGE18T,tlge18t,tlpye18t 2002-01-17 4 TLFGE18T relative luminous intensity forward voltage v f (v) i f ? v f forward current i f (ma) forward current i f (ma) i v ? i f luminous intensity i v (mcd) case temperature tc (c) i v ? tc relative luminous intensity i v wavelength (nm)) relative luminous intensity ? wavelength ambient temperature ta (c) i f ? ta allowable forward current i f (ma) radiation pattern 560 520 640 0.8 0 0.6 1.0 0.2 0.4 540 580 600 620 i f 20 ma ta 25c 40 0 120 60 0 40 80 20 20 60 80 100 ta 25c 30 0 60 90 90 30 60 1.0 0.8 0.6 0.4 0.2 0 80 70 50 40 20 10 70 80 50 40 20 10 20 20 80 5 0.1 3 10 1 0.3 0.5 0 40 60 2.0 1.6 2.3 50 30 10 3 1 1.7 2.1 5 100 1.8 1.9 2.2 ta 25c 10 1 100 1000 100 3 5 30 50 10 3000 ta 25c 30 300
tlpge18t,TLFGE18T,tlge18t,tlpye18t 2002-01-17 5 tlge18t radiation pattern ambient temperature ta (c) i f ? ta allowable forward current i f (ma) ta 25c relative luminous intensity forward voltage v f (v) i f ? v f forward current i f (ma) forward current i f (ma) i v ? i f luminous intensity i v (mcd) case temperature tc (c) i v ? tc relative luminous intensity i v wavelength (nm) relative luminous intensity ? wavelength 560 520 640 0.8 0 0.6 1.0 0.2 0.4 540 580 600 620 i f 20 ma ta 25c 40 0 120 60 0 40 80 20 20 60 80 100 30 0 60 90 90 30 60 1.0 0.8 0.6 0.4 0.2 0 80 70 50 40 20 10 70 80 50 40 20 10 20 20 80 5 0.1 3 10 1 0.3 0.5 0 40 60 2.0 1.6 2.3 50 30 10 3 1 1.7 2.1 5 100 1.8 1.9 2.2 ta 25c 10 1 100 1000 10 100 5000 3 5 30 50 ta 25c 50 500
tlpge18t,TLFGE18T,tlge18t,tlpye18t 2002-01-17 6 tlpye18t relative luminous intensity forward voltage v f (v) i f ? v f forward current i f (ma) forward current i f (ma) i v ? i f luminous intensity i v (mcd) case temperature tc (c) i v ? tc relative luminous intensity i v wavelength (nm) relative luminous intensity ? wavelength ambient temperature ta (c) i f ? ta allowable forward current i f (ma) radiation pattern ta 25c 2.0 1.6 2.3 50 30 10 3 1 1.7 2.1 5 100 1.8 1.9 2.2 ta 25c 40 0 120 60 0 40 80 20 20 60 80 100 30 0 60 90 90 30 60 1.0 0.8 0.6 0.4 0.2 0 80 70 50 40 20 10 70 80 50 40 20 10 20 20 80 5 0.1 3 10 1 0.3 0.5 0 40 60 580 540 660 0.8 0 0.6 1.0 0.2 0.4 560 600 620 640 i f 20 ma ta 25c 10 1 100 1000 10 100 5000 3 5 30 50 ta 25c 500 50
tlpge18t,TLFGE18T,tlge18t,tlpye18t 2002-01-17 7 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. gallium arsenide (gaas) is a substance used in the products described in this document. gaas dust and fumes are toxic. do not break, cut or pulverize the product, or use chemicals to dissolve them. when disposing of the products, follow the appropriate regulations. do not dispose of the products with other industrial waste or with domestic garbage. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707eac restrictions on product use
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